unisonic technologies co., ltd tul1203 preliminary npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r203-038.da high voltage fast-switching npn power transistor ? description the tul1203 is manufactured by using high voltage planar technology for high voltage capability and high switching speeds. ? features * bv ces up to 1400v. * better distribution of dynamic parameters and lot to lot spread * high switching speed ? ordering information ordering number pin assignment lead free plating halogen-free package 1 2 3 packing tul1203l-ta3-t TUL1203G-TA3-T to-220 b c e tube
tul1203 preliminary npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r203-038.da ? absolute maximum ratings parameter symbol ratings unit collector-base voltage (i e = 0) v cbo 1400 v collector-emitter voltage (v be = 0) v ces 1400 v collector-emitter voltage (i b = 0) v ceo 550 v emitter-base voltage (i c = 0) v ebo 12 v collector current i c 5 a collector peak current (t p <5 ms) i cm 8 a base current i b 2 a base peak current (t p <5 ms) i bm 4 a power dissipation (t c = 25 ) p d 100 w junction temperature t j +150 storage temperature t stg -65 ~ +150 note: absolute maximum ratings are the values beyond which the device will be damaged permanently. absolute maximum ratings are only stress ratings and it is not implied for functional device operation. ? thermal data parameter symbol ratings unit junction to case jc 1.25 /w ? electrical characteristics (t c = 25 unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current (v be = 0) i ces v ce = 1400 v 100 a emitter cut-off current (i b = 0) i ebo v eb = 12 v 100 a collector-emitter sustaining voltage (i b = 0) (note) v ceo(sus) i c = 100 ma 550 v i c = 1 a, i b = 200 ma 0.5 v i c = 2 a, i b = 400 ma 0.7 v collector-emitter sa turation voltage (note) v ce(sat) i c = 3 a, i b = 1 a 1.5 v i c = 2 a, i b = 400 ma 1.5 v base-emitter satu ration voltage (note) v be(sat) i c = 3 a, i b = 1 a 1.5 v i c = 1 ma, v ce = 5 v 10 i c = 10 ma, v ce = 5 v 10 i c = 0.8 ma, v ce = 3 v 14 32 dc current gain (note) h fe i c = 2 a, v ce = 5 v 9 28 storage time t s 2.5 3.0 s resistive load fall time t f i c = 2 a, v cc = 150 v i b1 = 0.4 a, i b2 = -0.8 a t p = 30 s 0.2 0.3 s avalanche energy e ar l = 2 mh, c = 1.8 nf i br 2.5a, 25 < t c <125 6 mj note: pulse test: pulse width = 300 s, duty cycle 1.5%
tul1203 preliminary npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r203-038.da test circuits v in t p r g t1 l=2mh v cc c i br t.u.t energy rating test circuit 5v
tul1203 preliminary npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r203-038.da utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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